Teledyne e2v 二极管、晶体管及晶闸管
| 型号 | 价格 | 库存 | 供应商 | 类别 | Category | Material | Configuration | Channel Type | Channel Mode | Number of Elements per Chip | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Typical Gate Charge @ Vgs - (nC) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Maximum Drain-Source Resistance - (Ohm) | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| M38510/10802BCA GENERAL PURPOSE NPN TRANSISTOR ARRAYS WITH PACKAGE SBDIP |
库存
10
从 $446.92 到 $698.31
每个
|
Teledyne e2v | 通用双极型晶体管 | 400 | 14 | CDIP | DIP | No | Unknown | Yes | No | No | No | EAR99 | No | |||||||||||||
TDG100E90BEPF
Trans MOSFET N-CH GaN 100V 90A 4-Pin T/R
|
|
Teledyne e2v | MOSFETs | Power MOSFET | GaN | Single Dual Source | N | Enhancement | 1 | 100 | 7 | 90 | 8@6V | 600@50V | 9.5@6V | 4 | No | No | No | No | EAR99 | No | ||||||
| TDG650E601TSP Space GaN E-Mode Transistor |
|
Teledyne e2v | MOSFETs | 4 | No | No | No | No | No |