Teledyne e2v Diodes, Transistors and Thyristors
3 Teledyne e2v Semiconductors Diodes, Transistors and Thyristors
Customize columns
Please select at least 1 column
| Part No. | Price | Stock | Manufacturer | Category | Category | Material | Channel Type | Configuration | Channel Mode | Number of Elements per Chip | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Power Dissipation - (mW) | Typical Input Capacitance @ Vds - (pF) | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| M38510/10802BCA GENERAL PURPOSE NPN TRANSISTOR ARRAYS WITH PACKAGE SBDIP |
Stock
10
From $446.92 to $698.31
Per Unit
|
Teledyne e2v | GP BJT | 400 | 14 | CDIP | DIP | No | Unknown | Yes | No | No | No | EAR99 | No | |||||||||||||
TDG100E90BEPF
Trans MOSFET N-CH GaN 100V 90A 4-Pin T/R
|
|
Teledyne e2v | MOSFETs | Power MOSFET | GaN | N | Single Dual Source | Enhancement | 1 | 100 | 7 | 90 | 9.5@6V | 8@6V | 600@50V | 4 | No | No | No | No | EAR99 | No | ||||||
| TDG650E601TSP Space GaN E-Mode Transistor |
|
Teledyne e2v | MOSFETs | 4 | No | No | No | No | No |