Infineon Technologies AG 二极管、晶体管及晶闸管
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IGP40N65H5XKSA1
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube
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库存
290
从 $1.52 到 $3.11
每个
|
Infineon Technologies AG | IGBT 芯片 | Single | N | ±20 | 650 | 74 | 250 | Tube | 3 | TO-220 | TO | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB3006PBF
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
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库存
539
从 $1.535 到 $2.166
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | N | Enhancement | 1 | 60 | ±20 | 4 | 270 | 200@10V | 0.4 | 200 | 8970@50V | 375000 | 2.5@10V | 2.1@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKP40N65H5XKSA1
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube
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库存
474
$1.80
每个
|
Infineon Technologies AG | IGBT 芯片 | Trench Stop 5 | Single | N | ±20 | 650 | 74 | 2500 | 50 | 250 | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB50N10S3L16ATMA1
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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库存
4,000
从 $1.0151 到 $1.0476
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 2.4 | 50 | 49@10V | 1.5 | 49 | 3215@25V | 100000 | 15.4@10V | 12.8@10V|13.1@10V|15.8@4.5V|16.1@4.5V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR08PNH6327XTSA1
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
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库存
18,000
从 $0.252 到 $0.399
每个
|
Infineon Technologies AG | 数字双极型晶体管 | NPN|PNP | Dual | 50 | 0.1 | 2.2 | 0.047 | 70@5mA@5V | 0.3@0.5mA@10mA | 250 | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0040TRPBF
Trans MOSFET N-CH 40V 3.6A 3-Pin SOT-23 T/R
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库存
414,000
从 $0.0704 到 $0.0873
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 40 | ±16 | 3.6 | 2.6@4.5V | 266@25V | 1300 | 56@10V | 44@10V|62@4.5V | HEXFET | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC033S10S1XTMA1
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
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库存
42
从 $2.861 到 $4.2354
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | GaN | Single Dual Drain Triple Source | N | Enhancement | 1 | 100 | 5.5 | 21 | 11@5V | 1200@50V | 3300 | 3.3@5V | 6 | TSON | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0501NSIATMA1
Trans MOSFET N-CH 30V 29A 8-Pin TDSON EP T/R
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库存
5,000
$0.4411
每个
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Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | 20 | 2 | 29 | 11.4@4.5V|24@10V | 50 | 24 | 1600@15V | 2500 | 1.9@10V | 1.5@10V|2@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP840ESDH6327XTSA1
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
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库存
2,880
从 $0.203 到 $0.318
每个
|
Infineon Technologies AG | 射频双极型晶体管 | NPN | SiGe | Single Dual Emitter | 2.25 | 2.9 | 1 | 0.035 | 1.8V/10mA | 150@10mA@1.8V | 120 to 200 | 0.41 | 80000(Typ) | 0.037 | 75 | 5(Typ) | 17 | 19.5 | 1.45(Typ) | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQDH29NE2LM5SCATMA1
Trans MOSFET N-CH 25V 75A 8-Pin WHSON EP T/R
|
库存
13
从 $1.719 到 $2.535
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 25 | 16 | 75 | 88@4.5V|191@10V | 191 | 13000@12V | 2500 | 0.29@10V | 8 | WHSON EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ058N03LSGATMA1
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
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库存
5,001
$1.0872
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | ±20 | 2.2 | 15 | 11@4.5V|22@10V | 2.8 | 22 | 1800@15V | 2100 | 5.8@10V | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZ60R037P7XKSA1
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube
|
库存
42
$3.118
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Dual Source | N | Enhancement | 1 | 600 | 20 | 4 | 76 | 121@10V | 121 | 5243@400V | 255000 | 37@10V | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSZ040N04LSGATMA1
Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R
|
库存
1,880
从 $0.794 到 $1.37
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 40 | ±20 | 2 | 18 | 23@4.5V|48@10V | 48 | 3800@20V | 2100 | 4@10V | 3.3@10V|4.5@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R160C6ATMA1
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
|
库存
4,000
$1.6047
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 3.5 | 23.8 | 75@10V | 62 | 75 | 1660@100V | 176000 | 160@10V | 140@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7540TRLPBF
Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK T/R
|
库存
485
从 $0.7313 到 $1.0806
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 3.7 | 110 | 88@10V | 88 | 4555@25V | 160000 | 5.1@10V | 4.2@10V|5.4@6V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IGP10N60TXKSA1
Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(3+Tab) TO-220AB Tube
|
库存
150
从 $0.742 到 $1.67
每个
|
Infineon Technologies AG | IGBT 芯片 | Single | N | ±20 | 600 | 24 | 110 | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS150R12N2T7B15BPSA1 Trans IGBT Module N-CH 1200V 150A 35-Pin ECONO2B Tray |
库存
9
从 $80.1548 到 $36.82
每个
|
Infineon Technologies AG | IGBT 模块 | Trench Stop | Hex | N | ±20 | 1200 | 150 | Tray | 35 | ECONO2B | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7914TRPBF
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
|
库存
78
从 $0.406 到 $0.582
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 30 | ±20 | 2.35 | 15 | 8.3@4.5V | 40 | 7.2 | 1160@15V | 220 | 3100 | 8.7@10V | 7.5@10V|11.2@4.5V | Tape and Reel | 8 | PQFN | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5410TRRPBF
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
|
库存
9,000
从 $0.4998 到 $0.5093
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 100 | ±20 | 13 | 58(Max)@10V | 58(Max) | 760@25V | 66000 | 205@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R17ME4BOSA1
Diode Module with Chopper-IGBT
|
库存
4
$297.00
每个
|
Infineon Technologies AG | IGBT 模块 | Dual | 1700 | Tray | 11 | ECONOD-5 | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
|
库存
8
$0.5032
每个
|
Infineon Technologies AG | IGBT 芯片 | Trench Stop | Single | N | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R140M1HXTMA1
Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R
|
库存
610
从 $3.0381 到 $1.2832
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | Single Hex Source | N | Enhancement | 1 | 1200 | 18 | 18 | 13.4@18V | 62 | 491@800V | 107000 | 189@18V | TMOS | Tape and Reel | 8 | TO-263 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA032N06N3GXKSA1
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube
|
库存
468
从 $1.6315 到 $3.2163
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Single | N | Enhancement | 1 | 60 | ±20 | 4 | 84 | 124@10V | 124 | 10000@30V | 41000 | 3.2@10V | 2.6@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRF9Z24NPBF
Trans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube
|
库存
6,749
从 $0.3191 到 $0.3652
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 55 | ±20 | 4 | 12 | 19(Max)@10V | 19(Max) | 350@25V | 45000 | 175@10V | HEXFET | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9024NPBF
Trans MOSFET P-CH Si 55V 11A 3-Pin(3+Tab) IPAK Tube
|
库存
28,654
从 $0.2935 到 $0.7859
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | Single | P | Enhancement | 1 | 55 | ±20 | 4 | 11 | 19(Max)@10V | 110 | 3.3 | 19(Max) | 350@25V | 170 | 38000 | 175@10V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |