Infineon Technologies AGIMZA65R072M1HXKSA1MOSFETs

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R107M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Summary of Features

• • Low capacitances
• • Optimized switching behavior at higher currents
• • Commutation robust fast body diode with low reverse recovery charge (Q_rr)
• • Superior gate oxide reliability
• • Excellent thermal behavior
• • Increased avalanche capability
• • Works with standard drivers

Benefits

• • High performance, high reliability and ease of use
• • Allows high system efficiency
• • Reduces system cost and complexity
• • Enables smaller system size
• • Works in topologies with continuous hard commutation
• • Fit for high temperature and harsh operations
• • Enables bi-directional topologies

Potential Applications

• • Server
• • Telecom
• • SMPS
• • Solar energy systems
• • Energy storage and battery formation
• • UPS
• • EV charging
• • Motor drives

 

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