onsemiTIP117GDarlington BJT
Trans Darlington PNP 100V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 2 | |
| 1000 | |
| 2.5@8mA@2A | |
| 1000@1A@4V|500@2A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 8.9 mm |
| Package Width | 4.45 mm |
| Package Length | 10.1 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
With one of these PNP TIP117G Darlington transistors from ON Semiconductor, you'll be able to process much higher current gain values within your circuit. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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