onsemiTIP117G达林顿双极型晶体管

With one of these PNP TIP117G Darlington transistors from ON Semiconductor, you'll be able to process much higher current gain values within your circuit. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.