| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | Si |
| Configuration | Single Triple Drain Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 12 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Continuous Drain Current (A) | 7 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 18@4.5V |
| Typical Gate Charge @ Vgs (nC) | 5.4@4.5V |
| Typical Input Capacitance @ Vds (pF) | 600@6V |
| Maximum Power Dissipation (mW) | 2900 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.3 mm |
| Package Width | 1 mm |
| Package Length | 1.5 mm |
| PCB changed | 6 |
| Standard Package Name | CSP |
| Supplier Package | WCSP-C |
| Pin Count | 6 |
