| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±12 | |
| 1.4 | |
| 4 | |
| 58@4V | |
| 8@4.5V|17@10V | |
| 17 | |
| 1.7 | |
| 2.5 | |
| 10 | |
| 665@10V | |
| 220 | |
| 2000 | |
| 13 | |
| 50 | |
| 29 | |
| 21 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 15@4.5V|17@2.5V | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI9933CDY-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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