| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ยฑ12 | |
| 1.4 | |
| 4 | |
| 58@4V | |
| 8@4.5V|17@10V | |
| 17 | |
| 1.7 | |
| 2.5 | |
| 10 | |
| 665@10V | |
| 220 | |
| 2000 | |
| 13 | |
| 50 | |
| 29 | |
| 21 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 15@4.5V|17@2.5V | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI9933CDY-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -50 ยฐC to 150 ยฐC. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.