| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.2 | |
| 4.9 | |
| 100 | |
| 1 | |
| 31@10V | |
| 25@4.5V|52@10V | |
| 52 | |
| 2240@15V | |
| 1100 | |
| 60 | |
| 22|10 | |
| 195|290 | |
| 25|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.31(Max) mm |
| Package Width | 1.6(Max) mm |
| Package Length | 1.6(Max) mm |
| PCB changed | 4 |
| Standard Package Name | BGA |
| Supplier Package | Micro Foot |
| 4 |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI8487DB-T1-E1 power MOSFET. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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