| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.2 | |
| 4.9 | |
| 100 | |
| 1 | |
| 31@10V | |
| 25@4.5V|52@10V | |
| 52 | |
| 2240@15V | |
| 1100 | |
| 60 | |
| 22|10 | |
| 195|290 | |
| 25|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.31(Max) |
| Largeur du paquet | 1.6(Max) |
| Longueur du paquet | 1.6(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 4 |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI8487DB-T1-E1 power MOSFET. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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