| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | EA |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Configuration | Single Quad Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 24@4.5V |
| Typical Gate Charge @ Vgs (nC) | 11@4.5V|12@5V |
| Typical Gate to Drain Charge (nC) | 1.1 |
| Typical Gate to Source Charge (nC) | 1.8 |
| Typical Reverse Recovery Charge (nC) | 6 |
| Typical Input Capacitance @ Vds (pF) | 1065@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 70@10V |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Output Capacitance (pF) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Reverse Recovery Time (ns) | 15 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Maximum Gate Resistance (Ohm) | 4.4 |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| Pin Count | 6 |
