VishaySI2323DDS-T1-GE3MOSFETs

Trans MOSFET P-CH 20V 5.3A 3-Pin SOT-23 T/R

Looking for a component that can both amplify and switch between signals within your circuit? The SI2323DDS-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 960 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

3.000 pezzi: disponibili per la spedizione 2 domani

    Total$607.80Price for 3000

    • (3000)

      disponibili per la spedizione 2 domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2427+
      Manufacturer Lead Time:
      36 settimane
      Country Of origin:
      Cina
      • In Stock: 3.000 pezzi
      • Price: $0.2026

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