VishaySI2323DDS-T1-GE3MOSFETs

Trans MOSFET P-CH 20V 5.3A 3-Pin SOT-23 T/R

Looking for a component that can both amplify and switch between signals within your circuit? The SI2323DDS-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 960 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

3,000 piezas: Se puede enviar en 2 días

    Total$607.80Price for 3000

    • (3000)

      Se puede enviar en 2 días

      Ships from:
      Estados Unidos de América
      Date Code:
      2427+
      Manufacturer Lead Time:
      36 semanas
      Country Of origin:
      China
      • In Stock: 3,000 piezas
      • Price: $0.2026

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