| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 4.5 | |
| 100 | |
| 1 | |
| 50@10V | |
| 3.16@4.5V|6.35@10V | |
| 6.35 | |
| 350@15V | |
| 1250 | |
| 7|23 | |
| 11|65 | |
| 11|12 | |
| 4.5|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) mm |
| Package Width | 1.4(Max) mm |
| Package Length | 3.04(Max) mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this SI2316BDS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.