| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Single Quint Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1700 |
| Maximum Gate-Source Voltage (V) | 22 |
| Operating Junction Temperature (°C) | 175 |
| Maximum Continuous Drain Current (A) | 3.9 |
| Maximum Drain-Source Resistance (mOhm) | 1500@18V |
| Typical Gate Charge @ Vgs (nC) | 24@18V |
| Typical Input Capacitance @ Vds (pF) | 197@800V |
| Maximum Power Dissipation (mW) | 39000 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 25 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
