onsemiNVD3055L170T4GMOSFETs
Trans MOSFET N-CH 60V 9A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±15 | |
| 9 | |
| 170@5V | |
| 4.7@5V | |
| 195@25V | |
| 28500 | |
| 38 | |
| 69 | |
| 10 | |
| 9.7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
This NVD3055L170T4G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 28500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.