onsemiNVD3055L170T4GMOSFET
Trans MOSFET N-CH 60V 9A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±15 | |
| 9 | |
| 170@5V | |
| 4.7@5V | |
| 195@25V | |
| 28500 | |
| 38 | |
| 69 | |
| 10 | |
| 9.7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
This NVD3055L170T4G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 28500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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