| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8542.39.00.01 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 12.6 | |
| 100 | |
| 1 | |
| 10.5@11.5V | |
| 6.5@4.5V|15@11.5V | |
| 750@12V | |
| 4000 | |
| 4|2 | |
| 22|18 | |
| 14|20 | |
| 12|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| 8 | |
| Lead Shape | No Lead |
This NTTFS4823NTWG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 4000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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