| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8542.39.00.01 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 12.6 | |
| 100 | |
| 1 | |
| 10.5@11.5V | |
| 6.5@4.5V|15@11.5V | |
| 750@12V | |
| 4000 | |
| 4|2 | |
| 22|18 | |
| 14|20 | |
| 12|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| 8 | |
| Forme de sonde | No Lead |
This NTTFS4823NTWG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 4000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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