onsemiNCP5106ADR2GGate driver e Driver di potenza
Driver 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Non-Inverting | |
| Full Bridge|Half Bridge | |
| 2 | |
| Independent | |
| IGBT|MOSFET | |
| 2 | |
| 160 | |
| 75 | |
| 170 | |
| 3.3V|5V | |
| 10 | |
| 20 | |
| 5 | |
| 0.8(Max) | |
| 2.3(Min) | |
| 10|30 | |
| 150 | |
| Under Voltage Lockout | |
| Yes | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Correctly change the biasing voltage to a high power transistor by using this NCP5106ADR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 170 ns. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has an operating temperature range of -55 °C to 150 °C. This device has a minimum operating supply voltage of -0.3 V and a maximum of 20 V.
| EDA / CAD Models |
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