onsemiMMBTA42LT1GGP BJT

Trans GP BJT NPN 300V 0.5A 300mW 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile NPN MMBTA42LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

Totale in stock: 1.943.500 pezzi

Regional Inventory: 984.000

    Total$45.30Price for 3000

    984.000 in magazzino: Spedisce domani

    • (3000)

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2433+
      Manufacturer Lead Time:
      41 settimane
      Country Of origin:
      Cina
      • In Stock: 984.000 pezzi
      • Price: $0.0151
    • disponibili per la spedizione 2 domani

      Ships from:
      Paesi Bassi
      Date Code:
      2320+
      Manufacturer Lead Time:
      30 settimane
      Country Of origin:
      Cina
      • In Stock: 959.500 pezzi
      • Price: $0.1351

    Progetta dispositivi medici guidati dall'IA

    White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.