onsemiMMBTA42LT1GGP BJT

Trans GP BJT NPN 300V 0.5A 300mW 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile NPN MMBTA42LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

Total In Stock: 1,943,500 parts

Regional Inventory: 984,000

    Total$45.30Price for 3000

    984,000 In stock: Ships tomorrow

    • (3000)

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2433+
      Manufacturer Lead Time:
      41 weeks
      Country Of origin:
      China
      • In Stock: 984,000 parts
      • Price: $0.0151
    • Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2320+
      Manufacturer Lead Time:
      30 weeks
      Country Of origin:
      China
      • In Stock: 959,500 parts
      • Price: $0.1351

    Design AI-powered medical devices

    Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.