| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 50 | |
| 85@10V | |
| 150@10V | |
| 150 | |
| 9700@25V | |
| 625000 | |
| 22 | |
| 25 | |
| 85 | |
| 30 | |
| -55 | |
| 150 | |
| Mounting | Screw |
| Package Height | 9.6(Max) |
| Package Width | 25.42(Max) |
| Package Length | 38.23(Max) |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 | |
| Lead Shape | Screw |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFN64N50P power MOSFET. Its maximum power dissipation is 625000 mW. This device utilizes polar hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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