| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 120 | |
| 16@10V | |
| 150@10V | |
| 150 | |
| 4900@25V | |
| 600000 | |
| 26 | |
| 42 | |
| 85 | |
| 33 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.24(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IXFH120N15P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 600000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.