| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 120 | |
| 16@10V | |
| 150@10V | |
| 150 | |
| 4900@25V | |
| 600000 | |
| 26 | |
| 42 | |
| 85 | |
| 33 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.24(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IXFH120N15P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 600000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.