Alpha and Omega SemiconductorAO4447AMOSFETs
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 18.5 | |
| 5.8@10V | |
| 46@4.5V|93@10V | |
| 93 | |
| 5020@15V | |
| 3100 | |
| 830 | |
| 280 | |
| 1400 | |
| 180 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.7@10V|6.3@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AO4447A power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.

