Alpha and Omega SemiconductorAO4447AMOSFET
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 18.5 | |
| 5.8@10V | |
| 46@4.5V|93@10V | |
| 93 | |
| 5020@15V | |
| 3100 | |
| 830 | |
| 280 | |
| 1400 | |
| 180 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.7@10V|6.3@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AO4447A power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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