Vishay®’s new TrenchFET® Gen IV medium voltage MOSFETs enable the HIGHEST efficiency, INCREASE power density, REDUCE component count, are COMPACT and HIGHLY EFFICIENT with Industry best RDS(ON) - Qoss Figure of Merit.
OVERVIEW
-- Reduced RDS(ON) minimizes conduction related power loss. Unlocks performance of compact packages and increases power density.
-- Low Coss to decrease key switching loss contributor. Further reduces power loss per device.
-- These design philosophies greatly impact the efficiency in switch-mode power supplies, motor drives and load switching.
New TrenchFET® Gen IV
SIR626DP-T1-RE3 -- 60V EU DWP
SIR182DP-T1-RE3 -- 60V Global DWP
SIR186DP-T1-RE3 -- 60V Global DWP
SIR184DP-T1-RE3 -- 60V Global DWP
SIS184DN-T1-GE3 -- 60V Global DWP
SIR680DP-T1-RE3 -- 80V Global DWP
ADVANTAGES
Advanced Package Design
Clip with minimum resistance and parasitic inductance
-- Reduce package contributed resistance by 66%
-- Maximize performance out of the silicon
-- Diversity in package offerings – package footprint down to 2-by-2 mm-square
More Efficient Synchronous Rectification
-- Shrink conduction loss by 40%, more power density
-- Reduce power loss from switching, potentially up to 60%
Below 1.7 mΩ in PowerPAK® S-O8
-- Reduce 25% RDS(ON) from current 60V TrenchFET® IV
-- 70% COSS reduction from prior generation
-- Very low COSS and Qoss, reduces switching related power loss in synchronous rectification
APPLICATIONS
-- Synchronous rectification
-- Primary side switch
-- DC/DC converter
-- Solar micro inverter
-- Motor drive switch
-- Battery and load switch
-- Industrial
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