Power up your design with Infineon’s OptiMOS™ 6 families

20 août 2024

Infineon’s leading technology, excellent performance and improved energy efficiency - for a sustainable future!

Infineon’s OptiMOS™ technology has evolved over the years and has now reached its sixth generation with the OptiMOS™ 6 power MOSFET series. This advanced technology is resulting in significant improvements in switching and conduction losses, as well as current capabilities. These improvements lead to lower system losses, enhanced power density, improved board temperatures, and overall system reliability.

As a result, OptiMOS™ 6 power MOSFETs are an ideal choice for various applications, such as telecom, solar, SMPS and renewable energy. Due to remarkable improvements in conduction resistance R_DS(on) and quality factor, they are also suitable for battery-powered applications, including power tools, low-speed vehicles, drones, robots, and battery management applications.

To meet your individual design requirements, the series offers multiple packaging options including PQFN 3.3x3.3, SuperSO8, D²PAK 3-pin, D²PAK 7-pin, TO-Leadless, sTOLL, TOLT, TOLG and TO-220.

OptiMOS™ 6 40 V

OptiMOS™ 6 100 V

OptiMOS™ 6 120 V

OptiMOS™ 6 135 V

OptiMOS™ 6 200 V

Key features

Ultra-low Q_G
Low R_DS(on)
Exposed pads
Available in logic and normal gate drive
RoHS compliant

Key features

Compared to OptiMOS™ 5 technology:

Up to ~18% lower R_DS(on)
30% improved FOM_g and up to ~43% better FOM_gd
Lower and softer reverse recovery charge (Q_rr)
175°C junction temperature rating
130% improved SOA

Pb-free plating and RoHS compliant

Key features

Industry’s lowest R_DS(on) in 120 V
Best balance between switching and conduction losses for various applications
Lower R_DS(on) and FOMs where 150 V is not needed
Wide package offering: SMD for FR4 and IMS PCBs, top-side cooling and THD
Industrial qualification and T_{j_max} = 175°C for superior power handling and ruggedness

Key features

Cost-efficient solution optimized for motor drives

Compared to OptiMOS™ 5 technology:

Improved paralleling capability through up to ~50% lower V_GS(th) spread
High performance with up to ~46% lower R_DS(on)
Up to ~70% lower and softer reverse recovery charge (Qrr)

Key features

Compared to the previous technology:

42% lower R_DS(on)
89% lower Q_rr(typ)
More than 3 times softer diode
Improved capacitance linearity
Improved SOA

Pb-free plating and RoHS compliant

Key applications

Battery powered applications
Battery powered tools
Battery management
Low voltage drives
Power tools

Key applications

Server
Telecom
Solar
Battery management systems

Key applications

Power and gardening tools
Adapters and fast chargers
Solar
Telecom
Light electric vehicles

Key applications

Forklift
eScooter
Power and gardening tool
UPS

Key applications

E-Scooters
Micro-EVs
E-forklifts
Gardening tools
Servo drives
Server
Telecom
Solar; ESS
Industrial SMPS
Audio

Read newest App Note: The new OptiMOS™ 6 200 V family of MOSFETs - Latest Infineon trench MOSFET technology setting the new industry standard

Infineon’s latest trench MOSFET technology, which takes advantage of a revolutionary cell design, is the brand new OptiMOS™ 6 200 V. It brings together the benefits of an exceptionally low on-state resistance R_DS(on), low diode reverse recovery and superior switching performance. These features make the OptiMOS™ 6 200 V the best fit for low-switching frequency applications such as motor drives. Firstly, the technology is briefly introduced, highlighting its technical benefits. Next, an extensive experimental evaluation compares the OptiMOS™ 6 200 V to the previous generation of OptiMOS™ 3 200 V MOSFETs.

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