25-50% de réduction
Diodes IncorporatedZXTP25020BFHTAGP BJT
Trans GP BJT PNP 20V 4A 1810mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 40 | |
| 20 | |
| 7 | |
| 1@200mA@4A | |
| 0.21@500mA@5A|0.06@100mA@1A|0.11@20mA@1A|0.19@40mA@2A|0.21@200mA@4A | |
| 4 | |
| 100@10mA@2V|80@1A@2V|50@4A@2V | |
| 1810 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3.04(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Implement this PNP ZXTP25020BFHTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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