Diodes IncorporatedZXTN620MATAGP BJT
Trans GP BJT NPN 80V 3.8A 2450mW 3-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 100 | |
| 80 | |
| 7 | |
| 1.175@300mA@3.5A | |
| 0.02@10mA@0.1A|0.06@50mA@0.5A|0.185@20mA@1A|0.2@50mA@1.5A|0.34@300mA@3.5A | |
| 3.8 | |
| 100 | |
| 200@10mA@2V|300@200mA@2V|110@1A@2V|60@1.5A@2V|20@3A@2V | |
| 2450 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.58 mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 3 | |
| Forme de sonde | No Lead |
Use this versatile NPN ZXTN620MATA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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