Diodes IncorporatedZXTD618MCTAGP BJT
Trans GP BJT NPN 20V 5A 2450mW 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Dual Dual Collector | |
| 2 | |
| 40 | |
| 20 | |
| 7 | |
| 1.07@125mA@4.5A | |
| 0.015@10mA@0.1A|0.15@10mA@1A|0.135@50mA@2A|0.25@100mA@3A|0.3@125mA@4.5A | |
| 5 | |
| 200@10mA@2V|300@200mA@2V|200@2A@2V|100@6A@2V | |
| 2450 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.78 mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 3 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | DFN EP |
| 8 | |
| Forme de sonde | No Lead |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXTD618MCTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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