| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 3.5 | |
| 100 | |
| 1 | |
| 55@4.5V | |
| 11@4.5V | |
| 872@10V | |
| 1500 | |
| 5.5 | |
| 5.2 | |
| 30 | |
| 3.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3.04(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Use Diodes Zetex's ZXMN2B14FHTA power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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