| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 0.16 | |
| 14000@10V | |
| 50(Max)@18V | |
| 625 | |
| 8(Max) | |
| 8(Max) | |
| 8(Max) | |
| 8(Max) | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of Diodes Zetex's ZVP3306A power MOSFET. Its maximum power dissipation is 625 mW. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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