| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 7 | |
| 1.25@100mA@1A | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 70@50mA@2V|100@500mA@2V|80@1A@2V|40@2A@2V | |
| 1500 | |
| -55 | |
| 200 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 mm |
| Largeur du paquet | 2.28 mm |
| Longueur du paquet | 4.57 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
The three terminals of this PNP ZTX751STZ GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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