Diodes IncorporatedZTX603Darlington BJT
Trans Darlington NPN 80V 1A 1000mW 3-Pin E-Line
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 80 | |
| 100 | |
| 10 | |
| 1.8@1mA@1A | |
| 1 | |
| 0.01 | |
| 150(Min) | |
| 1@0.4mA@400mA|1@1mA@1A | |
| 2000@50mA@5V|5000@500mA@5V|2000@1A@5V|500@2A@5V | |
| 1000 | |
| -55 | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
If you require a higher current gain value in your circuit, then the NPN ZTX603 Darlington transistor, developed by Diodes Zetex, is for you. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 2000@50mA@5 V|5000@500mA@5V|2000@1A@5V|500@2A@5V. It has a maximum collector emitter saturation voltage of 1@0.4mA@400mA|1@1mA@1A V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.8@1mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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