| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3.5 | |
| 1.1 | |
| 600@10V | |
| 200@25V | |
| 100 | |
| 1600 | |
| 25(Max) | |
| 15(Max) | |
| 25(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6(Max) |
| Largeur du paquet | 2.6(Max) |
| Longueur du paquet | 4.6(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the VP3203N8-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 1600 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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