10-25% de reduction
Microchip TechnologyVP2206N2MOSFET
Trans MOSFET P-CH Si 60V 0.75A 3-Pin TO-39 Bag
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 0.75 | |
| 900@10V | |
| 325@25V | |
| 6000 | |
| 22 | |
| 16 | |
| 16 | |
| 4 | |
| -55 | |
| 150 | |
| Bag | |
| Diamètre | 9.4(Max) |
| Installation | Through Hole |
| Hauteur du paquet | 6.6(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-39 |
| 3 | |
| Forme de sonde | Through Hole |
As an alternative to traditional transistors, the VP2206N2 power MOSFET from Microchip Technology can be used to both amplify and switch electronic signals. Its maximum power dissipation is 6000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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