| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 50 | |
| ±20 | |
| 2.4 | |
| 1.2 | |
| 100 | |
| 10 | |
| 300@10V | |
| 220@25V | |
| 70 | |
| 1000 | |
| 25(Max) | |
| 15(Max) | |
| 25(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Bag | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 | |
| Forme de sonde | Formed |
Use Microchip Technology's VN3205N3-G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1000 mW. This device is made with dmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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