10-25% de reduction
Microchip TechnologyVN1206L-GMOSFET
Trans MOSFET N-CH Si 120V 0.23A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±30 | |
| 0.23 | |
| 6000@10V | |
| 125(Max)@25V | |
| 1000 | |
| 12(Max) | |
| 8(Max) | |
| 18(Max) | |
| 8(Max) | |
| -55 | |
| 150 | |
| Bag | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the VN1206L-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 1000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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