| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| 0.27 | |
| 100 | |
| 10 | |
| 5000@10V | |
| 60(Max)@25V | |
| 625 | |
| -55 | |
| 150 | |
| Automotive | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
This VN10LP power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 625 mW. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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