| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±30 | |
| 2.5 | |
| 0.64 | |
| 100 | |
| 10 | |
| 1200@10V | |
| 50(Max)@20V | |
| 0.8 | |
| 110(Max) | |
| 1000 | |
| -55 | |
| 150 | |
| Bag | |
| 30 | |
| 3 | |
| 0.9 | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 |
Create an effective common drain amplifier using this VN0300L-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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