| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Non-Inverting | |
| 2 | |
| GaNFET|IGBT|MOSFET | |
| 2 | |
| 18 | |
| 10 | |
| 23 | |
| CMOS|TTL | |
| 4.5 | |
| 12 | |
| 18 | |
| 1.2 | |
| 2.1 | |
| 5(Typ) | |
| 0.5|5 | |
| -40 | |
| 140 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 3.15(Max) |
| Longueur du paquet | 3.15(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | WSON EP |
| 8 | |
| Forme de sonde | No Lead |
Switch between states in a high power transistor by using this UCC27524DSDT power driver developed by Texas Instruments. Its typical operating supply voltage is 12 V. This device has a maximum propagation delay time of 23 ns. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device has a typical operating supply voltage of 12 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 18 V. This gate driver has an operating temperature range of -40 °C to 140 °C.
| EDA / CAD Models |
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