| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Inverting|Non-Inverting | |
| 2 | |
| IGBT|MOSFET | |
| 2 | |
| 40 | |
| 40 | |
| 35 | |
| CMOS|TTL | |
| 4.5 | |
| 15 | |
| 0.6 | |
| 1.2 | |
| 2.2 | |
| 4 | |
| 2.2|30 | |
| 2120 | |
| -40 | |
| 125 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) |
| Largeur du paquet | 3.1(Max) |
| Longueur du paquet | 3.1(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | HVSSOP EP |
| 8 | |
| Forme de sonde | Gull-wing |
Switch between states in a high power transistor by using this UCC27325DGNR power driver developed by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 2120 mW. Its maximum power dissipation is 2120 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.
| EDA / CAD Models |
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