| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| Half Bridge | |
| 1 | |
| MOSFET | |
| 1 | |
| 14(Typ) | |
| 9(Typ) | |
| 600 | |
| 20(Typ) | |
| 4.5 | |
| 5.5 | |
| 2.15(Typ) | |
| 3 | |
| 2 | |
| -40 | |
| 125 | |
| Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) |
| Largeur du paquet | 3.1(Max) |
| Longueur du paquet | 3.1(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON EP |
| 8 | |
| Forme de sonde | No Lead |
Correctly change the biasing voltage to a high power transistor by using this UCC24610DRBR power driver by Texas Instruments. This device has a maximum propagation delay time of 20(typ) ns. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device has a minimum operating supply voltage of 4.5 V and a maximum of 5.5 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
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