| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 230 | |
| 230 | |
| 5 | |
| 3@0.8A@8A | |
| 15 | |
| 80@1A@5V|35@7A@5V | |
| 150000 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26 mm |
| Largeur du paquet | 5 mm |
| Longueur du paquet | 20 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3PL |
| 3 | |
| Forme de sonde | Through Hole |
The versatility of this NPN TTC5200(Q) GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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