| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting|Non-Inverting | |
| Half Bridge | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 10(Typ) | |
| 10(Typ) | |
| 2000 | |
| 14(Typ) | |
| 4.5 | |
| 7.2 | |
| 8 | |
| 0.5(Typ) | |
| 6 | |
| 1 | |
| 2580 | |
| -40 | |
| 125 | |
| Extended | |
| Undervoltage Lockout|Thermal Shutdown Protection | |
| 14(Typ) | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) |
| Largeur du paquet | 3.1(Max) |
| Longueur du paquet | 3.1(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON EP |
| 8 | |
| Forme de sonde | No Lead |
Change state in a high power transistor by implementing this TPS28225DRBR power driver by Texas Instruments. Its typical operating supply voltage is 7.2 V. This device has a maximum propagation delay time of 14(typ) ns and a maximum power dissipation of 2580 mW. Its maximum power dissipation is 2580 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a typical operating supply voltage of 7.2 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 8 V.
| EDA / CAD Models |
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