| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 35 | |
| 35 | |
| 50 | |
| CMOS | |
| 4 | |
| 14 | |
| 0.0002(Typ) | |
| 1.6|3.3|4.2 | |
| 3.3|5.8|8.2 | |
| 2(Typ) | |
| 730 | |
| -40 | |
| 125 | |
| Extended Industrial | |
| NAND Input | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.91 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
If you are working with high voltage transistors, implement this TPS2814DR power driver from Texas Instruments to switch states. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 730 mW. Its maximum power dissipation is 730 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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