| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Non-Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 35 | |
| 35 | |
| 50 | |
| CMOS | |
| 4 | |
| 14 | |
| 0.0002(Typ) | |
| 1.6|3.3|4.2 | |
| 3.3|5.8|8.2 | |
| 2(Typ) | |
| 730 | |
| -40 | |
| 125 | |
| Extended Industrial | |
| NAND Input | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 3.98(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
Transistors are a crucial component but for high powered designs this TPS2812DR power driver by Texas Instruments is a crucial component. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 730 mW. Its maximum power dissipation is 730 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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